question archive Question 2 (10 marks) An abrupt Si p+n junction diode has a cross sectional area of 1 mm2 , an acceptor concentration of 1 x 1018 cm-3 boron atoms on the p-side, and a donor concentration of 1 x 1016 cm-3 arsenic atoms on the n-side
Question 2 (10 marks) An abrupt Si p+n junction diode has a cross sectional area of 1 mm2 , an acceptor concentration of 1 x 1018 cm-3 boron atoms on the p-side, and a donor concentration of 1 x 1016 cm-3 arsenic atoms on the n-side
Subject:Electrical EngineeringPrice: Bought3
Question 2 (10 marks)
An abrupt Si p+n junction diode has a cross sectional area of 1 mm2 , an acceptor concentration of 1 x 1018 cm-3 boron atoms on the p-side, and a donor concentration of 1 x 1016 cm-3 arsenic atoms on the n-side. The lifetime of holes in the n-region is 500 ns, whereas that of electrons in the p-region is 25 ns due to a greater concentration of impurities on that side. Mean generation lifetime, τg is about 2 ?s. The lengths of the p- and n-regions are 10 ?m and 100 ?m respectively.
a) Find the minority diffusion lengths and determine type of diode.
(3 marks)
b) Find the built-in potential across the junction.
(3 marks)
c) Find the current when there is a forward bias of 0.7 V applied across the diode at 27 ?C. Assume that the current is by minority carrier diffusion.
